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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MAC97/D
Silicon Bidirectional Triode Thyristors
. . . designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO-92 package which is readily adaptable for use in automatic insertion equipment. * One-Piece, Injection-Molded Unibloc Package * Sensitive Gate Triggering in Four Trigger Modes for all possible Combinations of Trigger Sources, and Especially for Circuits that Source Gate Drives * All Diffused and Glassivated Junctions for Maximum Uniformity of Parameters and Reliability MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Peak Repetitive Off-State Voltage (Gate Open, TJ = -40 to +110C)(1) 1/2 Sine Wave 50 to 60 Hz, Gate Open MAC97-4, MAC97A4 MAC97-6, MAC97A6 MAC97-8, MAC97A8 On-State RMS Current Full Cycle Sine Wave 50 to 60 Hz (TC = +50C) Peak Non-repetitive Surge Current (One Full Cycle, 60 Hz, TA = 110C) Circuit Fusing Considerations TJ = -40 to +110C (t = 8.3 ms) Symbol VDRM Value Unit Volts
MAC97,A IMPROVED SERIES
(Device Date Code 9625 and Up)
Motorola preferred devices
TRIACs 0.8 AMPERE RMS 200 -- 600 VOLTS
200 400 600 IT(RMS) ITSM I2t VGM 0.8 8.0 0.26 5.0 5.0 0.1 1.0 -40 to +110 -40 to +150 Amp Amps A2s Volts Watts Watt Amp C C
MT1 MT2 G
v 2.0 ms) Peak Gate Power (t v 2.0 ms)
Peak Gate Voltage (t Peak Gate Current (t
Average Gate Power (TC = 80C, t
v 2.0 ms)
v 8.3 ms)
PGM PG(AV) IGM TJ Tstg
MT1 G
MT2
Operating Junction Temperature Range Storage Temperature Range
CASE 29-04 TO-226AA, STYLE 12 (TO-92)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Symbol RJC RJA Max 75 200 Unit C/W C/W
(1) VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
Motorola Thyristor Device Data (c) Motorola, Inc. 1996
1
MAC97,A IMPROVED SERIES
ELECTRICAL CHARACTERISTICS (TC = 25C, and Either Polarity of MT2 to MT1 Voltage unless otherwise noted)
Characteristic Peak Blocking Current(1) (VD = Rated VDRM, TJ = 110C, Gate Open) Peak On-State Voltage (Either Direction) (ITM = 1.1 A Peak; Pulse Width 2.0 ms, Duty Cycle Symbol IRRM Min -- -- Typ -- -- Max 0.1 1.65 Unit mA Volts mA -- -- -- -- -- -- -- -- VGT -- -- -- -- 0.1 0.1 IH tgt dv/dtc -- -- 1.5 -- -- -- -- -- -- -- 2.0 -- 2.0 2.0 2.0 2.5 -- -- 5.0 -- -- mA -- -- -- -- -- -- -- -- 10 10 10 10 5.0 5.0 5.0 7.0 Volts
v
v 2.0%)
VTM IGT
Gate Trigger Current (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+) MAC97 MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(-), G(+)
MAC97A
Gate Trigger Voltage, (Continuous dc) (VD = 12 Vdc, RL = 100 Ohms) MT2(+), G(+) All Types MT2(+), G(-) All Types MT2(-), G(-) All Types MT2(-), G(+) All Types (VD = Rated VDRM, RL = 10 k Ohms, TJ = 110C) MT2(+), G(+); MT2(-), G(-); MT2(+), G(-) All Types MT2(-), G(+) All Types Holding Current (VD = 12 Vdc, ITM = 200 mA, Gate Open) Gate Controlled Turn-On Time (VD = Rated VDRM, ITM = 1.0 A pk, IG = 25 mA) Critical Rate-of-Rise of Commutation Voltage (f = 250 Hz, ITM = 1.0 A, Commutating di/dt = 1.5 A/mS, On-State Current Duration = 2.0 mS, VDRM = 200 V, Gate Unenergized, TC = 110C, Gate Source Resistance = 150 W, See Figure 13) Critical Rate-of-Rise of Off State Voltage (Vpk = Rated VDRM, TC = 110C, Gate Open, Exponential Method)
ms
V/ms
dv/dt
10
--
--
V/ms
2
Motorola Thyristor Device Data
MAC97,A IMPROVED SERIES
TC, MAXIMUM ALLOWABLE CASE TEMPERATURE ( C)
110 I T(RMS) , MAXIMUM ALLOWABLE AMBIENT TEMPERATURE ( C) 100 90 DC 80 180 70 60 50 40 30 0 = CONDUCTION ANGLE 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 120
110
T = 30
60 90
100 90 80 70 60 50 40 30 20 0 = CONDUCTION ANGLE 0.05 0.1 0.15 DC 180
T = 30
60 90
120
0.2
0.25
0.3
0.35
0.4
IT(RMS), RMS ON-STATE CURRENT (AMPS)
IT(RMS), RMS ON-STATE CURRENT (AMPS)
Figure 1. RMS Current Derating
P(AV), MAXIMUM AVERAGE POWER DISSIPATION (WATTS)
Figure 2. RMS Current Derating
IT, INSTANTANEOUS ON-STATE CURRENT (AMPS)
1.2 1.0 0.8 0.6 0.4 0.2 0 = CONDUCTION ANGLE
10 TYPICAL @ TJ = 25C MAXIMUM @ TJ = 110C 1.0
MAXIMUM @ TJ = 25C 0.1
MAXIMUM @ TJ = 110C 0.01 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
IT(RMS), RMS ON-STATE CURRENT (AMPS)
VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS)
Figure 3. Power Dissipation
R(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)
Figure 4. On-State Characteristics
1.0 I TSM , PEAK SURGE CURRENT (AMPS)
10
Z 0.1
QJC(t) = RQJC(t) @ r(t)
5.0
3.0 2.0 TJ = 110C f = 60 Hz
CYCLE
Surge is preceded and followed by rated current. 1.0 1.0 2.0 3.0 5.0 10 30 50 100
0.01
0.1
1.0
10
100
1S103
1S104
t, TIME (ms)
NUMBER OF CYCLES
Figure 5. Transient Thermal Response
Figure 6. Maximum Allowable Surge Current
Motorola Thyristor Device Data
3
MAC97,A IMPROVED SERIES
6.0 5.0 4.0 3.0 2.0 1.0 0 -40 MAIN TERMINAL #2 NEGATIVE MAIN TERMINAL #2 POSITIVE I GT, GATE TRIGGER CURRENT (mA)
10 Q3
I H, HOLDING CURRENT (mA)
Q2 Q1 1.0
Q4
-20
0
20
40
60
80
100 110
0.1 -40
-20
0
20
40
60
80
100 110
TJ, JUNCTION TEMPERATURE (C)
TJ, JUNCTION TEMPERATURE (C)
Figure 7. Typical Holding Current Variation
Figure 8. Typical Gate Trigger Current Variation
60 600 Vpk TJ = 110C
1.1 VGT, GATE TRIGGER VOLTAGE (VOLTS)
0.9 Q2 0.7 Q1
Q4
STATIC dv/dt (V/mS)
Q3
50
MAIN TERMINAL #2 POSITIVE MAIN TERMINAL #2 NEGATIVE
40
0.5
30
0.3
-40
-20
0
20
40
60
80
100
20
10
100
1000
10,000
TJ, JUNCTION TEMPERATURE (C)
RGK, GATE - MT1 RESISTANCE (OHMS)
Figure 9. Gate Trigger Voltage Variation
Figure 10. Exponential Static dv/dt versus Gate MT1 Resistance
10
10
60 Hz 180 Hz
60C COMMUTATING dv/dt dv/dtc , (V/mS) ITM 100C 110C tw 80C COMMUTATING dv/dt dv/dtc , (V/mS) 300 Hz 400 Hz
f
VDRM 1.0 1.0
+ 2t1
w
(di dt) c
+ 6f I 1000
TM
VDRM = 200 V 1.0
10 di/dtc, RATE OF CHANGE OF COMMUTATING CURRENT (A/mS)
60
70
80
90
100
110
TJ, JUNCTION TEMPERATURE (C)
Figure 11. Typical Commutating dv/dt versus Current Crossing Rate and Junction Temperature
Figure 12. Typical Commutating dv/dt versus Junction Temperature at 0.8 Amps RMS
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Motorola Thyristor Device Data
MAC97,A IMPROVED SERIES
80 mHY LL 75 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CONTROL TRIGGER CHARGE CHARGE CONTROL MEASURE I RS 56
1N4007
- 2 1N914 CS 0.047 CS ADJUST FOR dv/dt(c) 200 V +
51 G
1
5 mF NON-POLAR CL
NOTE: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information.
Figure 13. Simplified Q1 (dv/dt)c Test Circuit
Motorola Thyristor Device Data
5
MAC97,A IMPROVED SERIES
PACKAGE DIMENSIONS
A R P
SEATING PLANE
B
STYLE 12: PIN 1. MAIN TERMINAL 1 2. GATE 3. MAIN TERMINAL 2
F
L K
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
XX G H V
1
D J C SECTION X-X N N
CASE 29-04 (TO-226AA) (TO-92)
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 or 602-303-5454 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-81-3521-8315 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
6
*MAC97/D*
Motorola Thyristor Device Data
MAC97/D

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